77-79 Ghz Stacked Low Noise Amplifier for Automotive Radar

Muhammad Zeshan, Shabbir Majeed Chaudhry


This paper describes the three stage stacked low noise amplifier for automotive radar applications. Stack structure is employed to overcome the inability of MOSFETs to operate at high voltage levels, as stacked MOSFETs can tolerate k × Vmax where Vmax can be chosen to be near the breakdown voltage of a single device. Realized in 65nm CMOS process, the stacked amplifier provides a gain of 15 dB with noise figure of 3.5 dB at 79 GHz. The amplifier draws 28.2 mA current from a 3V supply. To examine the nonlinear behavior of the amplifier Volterra analysis is performed, second and third order harmonic distortions are determined. The effect of feedback on the output resistance is examined using Blackman’s analysis. Sensitivity analysis of the stacked LNA is also performed to determine the effect of parameter variations on the circuit performance.

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Behzad Razavi,“A 60-GHz CMOS Receiver Front-End,” IEEE Journal of Solid-State Circuits, vol. 41, No. 1, January 2006.

Kai Kang, Fujiang Lin, Duy-Dong Pham, James Brinkhoff,Chun-Huat Heng, Yong Xin Guo, Xiaojun Yuan,“ A 60-GHz OOK Receiver With an On-Chip Antennain 90 nm CMOS,” IEEE Journal Of Solid-State Circuits, vol. 45, No. 9, September 2010.

R. Merritt, “60 GHz groups face off inBeijing over Wi-Fi’s future,” EE Times,May 18, 2010.


Hayg-Taniel Dabag, , Bassel Hanafi, Fatih Golcuk, Amir Agah,James F. Buckwalter, , Peter M. Asbeck, “Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers,” IEEE Transactions On Microwave Theory And Techniques, vol. 61, NO. 4, APRIL 2013.

Sataporn Pornpromlikit, Jinho Jeong, Calogero D. Presti, Antonino Scuderi, Peter M. Asbeck,“A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS,” IEEE Transactions On Microwave Theory And Techniques, vol. 58, No. 1, January 2010.

Terry Yao, Michael Q. Gordon, Keith K. W. Tang, Kenneth H. K. Yau, Ming-Ta Yang, Peter Schvan,Sorin P. Voinigescu,“ Algorithmic Designof CMOS LNAs and PAsfor 60-GHz Radio,” IEEE Journal Of Solid-State Circuits, vol. 42, No. 5, May 2007.

Chris Bowick,RF circuit Design. Indianapolis, USA: H.W.Sams, 1982.

Leo G. Maloratsky, Integrated Microwave Front-Endswith Avionics Applications.Boston, London: Artech House, 2012.

S. Kim, H.-C. Kim, D.-H. Kim, S. Jeon, M. Kim andJ.-S. Rieh,“58–72 GHz CMOS wideband variable gainlow-noise amplifier,” Electronics Letters 4th August 2011 vol. 47 No. 16.

Yi-Keng Hsieh, Jing-Lin Kuo, Huei Wang, and Liang-Hung Lu,“ A 60 GHz Broadband Low-Noise Amplifier WithVariable-Gain Control in 65 nm CMOS,” IEEE Microwave And Wireless Components Letters, vol. 21, No. 11, November 2011.

Po-Yu Chang, Sy-Haur Su, Shawn S. H. Hsu, Wei-Han Cho, and Jun-De Jin,“An Ultra-Low-Power Transformer-Feedback 60 GHzLow-Noise Amplifier in 90 nm CMOS,” IEEE Microwave and Wireless Components Letters, vol. 22, No. 4, April 2012.

Chun-Yu Lin, Li-WeiChu, and Ming-Dou Ker, “ESD Protection Design for 60-GHz LNA withInductor-Triggered SCR in 65-nm CMOS Process,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, No. 3, March 2012.

Y.-S. Lin, G.-L. Lee and C.-C. Wang,“ Low-power 77–81 GHz CMOS LNA withexcellent matching for automotive radars,” Electronics Letters 30th January 2014 vol. 50 No. 3 pp. 207–209.

Piet nambacq, Willy sansen,Distortion analysis of analog integrated circuits.Boston, London: Kluwer Academic Publishers, 1998.

Youngmin Kim, and Youngwoo Kwon,“Analysis and Design of Millimeter-Wave PowerAmplifier Using Stacked-FET Structure,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, No. 2, February 2015.

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